Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Patent
1993-11-23
1996-01-30
Beck, Shrive
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
427255, 4272551, 4272552, C23C 1600
Patent
active
054879230
ABSTRACT:
A method for depositing tungsten nitride thin films prior to a formation of tungsten thin films using the plasma-enhanced chemical vapor deposition, capable of restraining an occurrence of corrosions at a silicon substrate, an oxide film and boundary surfaces thereof, during the formation of tungsten thin films. The deposition of tungsten nitride thin film is carried out using a plasma-enhanced chemical vapor deposition at a deposition temperature of 300.degree. C. to 600.degree. C. and a deposition pressure of 0.1-1 Tort while maintaining a NH.sub.3 /WF.sub.6 partial pressure ratio at a range of 0.25 to 2. The obtained tungsten nitride thin film exhibits very low resistivity of 70 .mu..OMEGA.-cm to 300 .mu..OMEGA.-cm and effectively restrains an occurrence of corrosions at a silicon substrate, an oxide film and boundary surfaces thereof, during the formation of tungsten thin films using the plasma-enhanced chemical vapor deposition.
REFERENCES:
patent: 4963394 (1990-10-01), Willer
Japanese Patent Abstracts, No. 1-5015, Jan. 1989.
Joshi et al., "The Role of Process Parameters of Selective W Deposited by SiH.sub.4, H.sub.2, and WF.sub.6 Chemistry in Terms of Shallow Junction Leakage," Proceedings on the 1988 Workshop on Tungsten and Other Refractory Metals for VLSI Application IV, Materials Research Society, Pittsburgh, 1985, pp. 85-92 no month.
Wolf et al., "Silicon Processing in the VLSI Era," Lattice Press, Sunbeach, pp. 399-405 no date.
Colgan et al., "Comparison of Temperature Control Methods in a Cold-Wall Single-Wafer LPCVD System," 1989 Materials Research Society, pp. 205-209 no month.
Bunshah, "Deposition Technologies for Films & Coatings", p. 367 (1982).
Kim Yong T.
Min Suk-ki
Beck Shrive
Korea Institute of Science and Technology
Maiorana David M.
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