Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2005-09-27
2005-09-27
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S253000, C438S397000, C438S241000, C438S243000, C438S252000, C438S618000, C438S626000, C438S627000, C438S633000, C438S639000, C438S396000, C438S398000, C438S637000, C438S399000, C438S254000, C438S239000, C438S680000
Reexamination Certificate
active
06949480
ABSTRACT:
Disclosed is a method for depositing a silicon nitride layer of a semiconductor device. The method includes the steps of providing Al-based compound as a catalyst, and reacting DCS with NH3by using the Al catalyst, thereby depositing the silicon nitride layer. DCS is reacted with NH3by using the Al catalyst when depositing the silicon nitride layer, so dissolution of DCS is promoted by means of the Al catalyst, so that the silicon nitride layer is deposited at a high speed, thereby improving productivity of semiconductor devices. The silicon nitride layer is deposited by using DCS under a low-temperature condition of about 500 to 800° C., without deteriorating device characteristics.
REFERENCES:
patent: 3959443 (1976-05-01), Kabayama
patent: 4948459 (1990-08-01), van Laarhoven et al.
patent: 6740580 (2004-05-01), Gupta et al.
patent: 2001/0055869 (2001-12-01), Marsh
Eun Yong Seok
Jung Sung Hoon
Kim Hyung Kyun
Baumeister B. William
Hynix / Semiconductor Inc.
Ladas & Parry LLP
Yevsikov Victor V.
LandOfFree
Method for depositing silicon nitride layer of semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for depositing silicon nitride layer of semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for depositing silicon nitride layer of semiconductor... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3410035