Method for depositing silicon

Details Method for depositing silicon Method for depositing silicon

2011-07-19

2011-07-19

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S478000, C257SE21297

Reexamination Certificate

active

07981776

ABSTRACT:
The inventive method for depositing silicon onto a substrate firstly involves the introduction of a reactive silicon-containing gas and hydrogen into the plasma chamber and then the initiation of the plasma. After initiating the plasma, only reactive silicon-containing gas or a gas mixture containing hydrogen is supplied to the plasma chamber in an alternatively continuous manner, and the gas mixture located inside the chamber is, at least in part, simultaneously withdrawn from the chamber. From the start, homogeneous microcrystalline silicon is deposited onto the substrate in the presence of hydrogen.

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