Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2006-11-07
2006-11-07
Everhart, Caridad (Department: 2891)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C257SE21581, C438S790000
Reexamination Certificate
active
07132374
ABSTRACT:
A processing method for depositing porous silica and doped silica films is provided. The method uses a cyclic scheme wherein each cycle comprises first codepositing silica with silicon, then selectively removing the silicon to form a porous structure. In a preferred embodiment, the codeposition is carried out by plasma enhanced chemical vapor deposition. The reagent feed stream comprises a mixture of codeposition reagents and a selective silicon removal reagent. RF power modulation is used to control the codeposition and the selective silicon removal steps with the later proceeds whenever the RF power is turned off or reduced to a low level. A porous film with highly uniform small pores and a desired porosity profile can be obtained with this method. This method is advantageous for forming a broad range of low-k dielectrics for semiconductor integrated circuit fabrication. The method is also advantageous for forming other porous films for other applications.
REFERENCES:
patent: 6007675 (1999-12-01), Toshima
patent: 6054206 (2000-04-01), Mountsier
patent: 6171945 (2001-01-01), Mandal et al.
patent: 6271273 (2001-08-01), You et al.
patent: 6451712 (2002-09-01), Dalton et al.
patent: 6737365 (2004-05-01), Kloster et al.
patent: 2002/0132101 (2002-09-01), Fonash et al.
patent: 2003/0232137 (2003-12-01), Vrtis et al.
patent: 2004/0026783 (2004-02-01), Kloster et al.
patent: 2004/0061201 (2004-04-01), Andideh
patent: 2004/0096593 (2004-05-01), Lukas et al.
patent: 2004/0096672 (2004-05-01), Lukas et al.
Maex, K. et al.,Low Dielectric Constant Materials for Microelectrics, Journal of Applied Physics, Jun. 1, 2003, pp. 8793-8841, vol. 93, No. 11, American Institute of Physics.
Wolf, S.Silicon Processing for the VLSI ERA; Deep-Submicron Process Technology, 2002, pp. 639-670, vol. 4, Lattice Press, Sunset Beach, California.
International Search Report dated Dec. 21, 2005 in PCT/US05/29281.
Law Kam S.
Mak Cecilia Y.
Everhart Caridad
Law Kam S.
Mak Cecilia Y.
LandOfFree
Method for depositing porous films does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for depositing porous films, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for depositing porous films will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3654597