Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Reexamination Certificate
2007-02-13
2007-02-13
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
C438S014000, C438S149000, C257SE31093
Reexamination Certificate
active
10263623
ABSTRACT:
Method and apparatus to obtain as-deposited polycrystalline and low-stress SiGe layers. These layers may be used in Micro Electro-Mechanical Systems (MEMS) devices or micromachined structures. Different parameters are analysed which effect the stress in a polycrystalline layer. The parameters include, without limitation: deposition temperature; concentration of semiconductors (e.g., the concentration of Silicon and Germanium in a SixGe1−xlayer, with x being the concentration parameter); concentration of dopants (e.g., the concentration of Boron or Phosphorous); amount of pressure; and use of plasma. Depending on the particular environment in which the polycrystalline SiGe is grown, different values of parameters may be used.
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Baert Kris
Caymax Matty
Rusu Cristina
Sedky Sherif
Witvrouw Ann
Estrada Michelle
Interuniversitair Microelektronica Centrum (IMEC)
McDonnell Boehnen & Hulbert & Berghoff LLP
Toledo Fernando L.
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