Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1996-11-13
1998-06-09
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419213, 20419215, 20429803, 20429819, 20429822, 20429826, C23C 1434
Patent
active
057627665
ABSTRACT:
A sputtering method includes depositing a magnetic thin film on both surfaces of a substrate by magnetron sputtering, wherein magnetic assemblies of magnetron cathodes form a magnetic field asymmetric to a rotation axis perpendicular to the substrate on a target, and a pair of magnet assemblies of magnetron cathodes opposing each other rotate at the same speed and in the same direction. A sputtering mechanism for depositing a magnetic thin film on both surfaces of the substrate by magnetron sputtering, includes a controller system for controlling a rotation drive unit of each magnet assembly on a pair of magnetron cathodes being held in common.
REFERENCES:
patent: 4880514 (1989-11-01), Scott et al.
patent: 4894133 (1990-01-01), Hedgcoth
patent: 5047130 (1991-09-01), Akao et al.
Anelva Disk Sputtering System C-3010 (Brochure); Aug. 1995.
Anelva In-Line Disk Sputtering System 3100 Series; (Brochure); May 1989.
Kurita Takaki
Watanabe Naoki
Yamada Naoki
Anelva Corporation
Nguyen Nam
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