Method for depositing III-V semiconductor layers on a...

Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Having enclosed cavity

Reexamination Certificate

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C438S478000

Reexamination Certificate

active

07078318

ABSTRACT:
The invention relates to a method for depositing thick III-V semiconductor layers on a non-III-V substrate, particularly a silicon substrate, by introducing gaseous starting materials into the process chamber of a reactor. The aim of the invention is to carry out the crystalline deposition of thick III-V semiconductor layers on a silicon substrate without the occurrence of unfavorable lattice distortions. To this end, the invention provides that a thin intermediate layer is deposited at a reduced growth temperature between two III-V layers.

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International Search Report, Jan. 28, 2004.

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