Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2011-03-08
2011-03-08
Le, Thao X (Department: 2892)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C438S486000, C438S487000, C438S482000, C438S488000, C438S096000, C438S097000
Reexamination Certificate
active
07902049
ABSTRACT:
A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.
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Guha Subhendu
Yan Baojie
Yang Chi C.
Gifford Krass Sprinkle Anderson & Citkowski P.C.
Le Thao X
Tran Thanh Y
United Solar Ovonic LLC
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