Method for depositing high density plasma chemical vapor deposit

Details Method for depositing high density plasma chemical vapor deposit Method for depositing high density plasma chemical vapor deposit

1998-11-25

2000-10-10

Nguyen, Nam

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

438714, 438633, 438759, 438695, C23C 1434, H01L 214763, H01L 21311, H01L 2131

Patent

active

061298190

ABSTRACT:
A method of forming a HDPCVD oxide layer over metal lines, the metal lines having gaps between the metal lines having an aspect ratio of two or more. The method comprises the steps of: forming a liner oxide layer over the metal lines; and forming an HDPCVD oxide layer over the liner oxide layer, the formation of the HDPCVD oxide layer being done such that the deposition-to-sputter ratio is increasing as the gaps are being filled.

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patent: 5679606 (1997-10-01), Wang et al.
patent: 5814564 (1998-09-01), Yao et al.
patent: 5913140 (1999-06-01), Roche et al.
patent: 5920792 (1999-07-01), Lin

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