Method for depositing heteroepitaxially InP on GaAs semi-insulat

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156DIG70, C30B 2502

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active

043148735

ABSTRACT:
A method for depositing high quality indium phosphide layers heteroepitaxly on GaAs substrates by controlling the growth between them of an interfacial quaternary alloy of In.sub.y Ga.sub.1-y As.sub.x P.sub.1-x.

REFERENCES:
patent: 3351502 (1967-11-01), Rediker
patent: 3963539 (1976-06-01), Kemlage et al.
patent: 3993533 (1976-11-01), Milnes et al.
J. Electrochem. Soc., 11/70, vol. 117 No. 11, 1417-1419, Allen.

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