Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2009-06-22
2010-11-02
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S099000, C438S221000, C438S424000, C257SE21191, C257SE21545, C257SE21553
Reexamination Certificate
active
07825040
ABSTRACT:
A method of filling a recess with an insulation film includes: introducing an alkoxysilane or aminosilane precursor containing neither a Si—C bond nor a C—C bond into a reaction chamber where a substrate having an irregular surface including a recess is placed; and depositing a flowable Si-containing insulation film on the irregular surface of the substrate to fill the recess therewith by plasma reaction at −50° C. to 100° C.
REFERENCES:
patent: 2008/0076266 (2008-03-01), Fukazawa et al.
patent: 2009/0142935 (2009-06-01), Fukuzawa et al.
Fukazawa Atsuki
Ha Jeongseok
Tazawa Hisashi
Ueda Shintaro
ASM Japan K.K.
Garber Charles D
Lee Cheung
Snell & Wilmer L.L.P.
LandOfFree
Method for depositing flowable material using alkoxysilane... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for depositing flowable material using alkoxysilane..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for depositing flowable material using alkoxysilane... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4177486