Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-02-27
2000-09-12
Nguyen, Tuan H.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438664, 118 501, 427124, H01L 2144, C23C 1400, B05D 512
Patent
active
061177717
ABSTRACT:
A method and apparatus are provided for forming cobalt on a silicon substrate containing native silicon oxide on the surface thereof wherein a modified vapor sputtering device is used. The vapor sputtering device is modified by providing an electrical circuit to ground whereby the wafer disposed in the device is electrically connected to the ground circuit. The ground circuit preferably contains a resistor therein to control wafer voltage and current flow from the wafer to ground. It has been found that providing a current flow from the wafer to ground and particularly in a ground circuit containing a resistor, provides an in-situ simultaneous cleaning of native oxide on the silicon surface and deposition of cobalt on cleaned silicon. The deposited cobalt containing substrate may then be readily annealed to form cobalt silicide evenly and uniformly across the desired regions of the wafer surface. A cobalt coated silicon substrate and an annealed cobalt silicide coated silicon substrate made using the method and apparatus of the invention are also provided as well as electronic components made using the cobalt coated silicon substrate.
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Murphy William J.
Tiwari Prabhat
Berezny Nema
International Business Machines - Corporation
Nguyen Tuan H.
Sabo William D.
Tomaszewski John J.
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