Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Patent
1995-12-13
1998-03-31
Niebling, John
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
438643, 438648, 438653, 438656, H01L 2128
Patent
active
057338167
ABSTRACT:
This invention is a process for depositing tungsten metal on a silicon surface with the deposited layer having improved uniformity of thickness over prior art deposition techniques. The process involves the steps of removing any native silicon dioxide present on the silicon surface, forming a barrier layer which overlies the silicon surface which prevents the upward diffusion of silicon atoms from the polycrystalline surface, and depositing a final tungsten metal layer on top of the barrier layer. The barrier layer is preferably a refractory metal nitride. It may be formed directly by chemical vapor deposition, by reactive sputtering, or it may be formed indirectly by depositing a preliminary tungsten metal layer, subjecting the preliminary layer to a plasma formed from NH.sub.3 and N.sub.2 gases. Both preliminary and final tungsten metal layers are deposited preferably via chemical vapor deposition using the WF.sub.6 and SiH.sub.4 as reactants.
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Iyer Ravi
Vasilyeva Irina
Bilodeau Thomas G.
Fox III Angus C.
Micro)n Technology, Inc.
Niebling John
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