Coating processes – Coating by vapor – gas – or smoke
Patent
1995-06-02
1997-02-18
Beck, Shrive
Coating processes
Coating by vapor, gas, or smoke
4271261, 4272552, 427255, 427226, C23C 1634, C23C 1642
Patent
active
056039883
ABSTRACT:
Titanium and/or tantalum nitrides or nitride silicides are deposited onto a substrate by chemical vapor deposition of a titanium and/or tantalum silylamido complex.
REFERENCES:
patent: 5178911 (1993-01-01), Gordon et al.
patent: 5344948 (1994-09-01), Verkade
Laurent et al., "New Journal of Chemistry," vol. 18, No. 5, (1994) pp. 575-580. (month unknown).
Nanula et al., "Preparation of Silicon Nitride--Titanium Nitride and Titanium-Titanium Nitride Composites from (CH.sub.3).sub.3 SiNHTiCl.sub.3 -Coated Si.sub.3 N.sub.4 and Ti Particles". J. Am. Ceram. Soc., 78(5), 1247-51, May, 1995.
Sherman, Chemical Vapor Deposition for Microelectronics--Principles, Technology and Applications, Noyes Publications, 1987, pp. 92-117. (month unknown).
Norman et al., New OMCVD Precursors for Selective Copper Metallization, 1991, VMIC Conference, TH-0359-0/91/0000-0123, pp. 123-129. (month unknown).
Ellwanger et al., An Integrated Aluminum/CVD-W Metallization Process for Sub-Micron Contact Filling, 1991, VMIC Conference, TH-0359-0/91/0000-0041, pp. 41-50. (month unknown).
Nishimura et al., Reliable Submicron Vias Using Aluminum Alloy High Temperature Sputter Filling, 1991, VMIC Conference, TH-0359-0/91/0000-0170. (month unknown).
Holl et al., Surface Reactivity of Alkylgold(I) Complexes: Substrate-Selective Chemical Vapor Deposition of Gold from RAuP(CH.sub.3).sub.3 (R=CH.sub.2 CH.sub.3, CH.sub.3) at Remarkably Low Temperatures, Inorganic Chemistry, 1994, 33, pp. 510-517. (month unknown).
Raaijmakers et al., Low Temperature MOCVD of Advanced Barrier Layers for the Microelectronics Industry, Applied Surface Science 73, 1993, pp. 31-41. (month unknown).
Saeki et al., Reaction Process of Titanium Tetrachloride with Ammonia in the Vapor Phase and Properties of the Titanium Nitride Formed, The Chemical Society of Japan, Bull. Chem. Soc. Jpn., 55, 1982, pp. 3193-3196. (month unknown).
Kurtz et al., Chemical Vapor Deposition of Titanium Nitride at Low Temperatures, Thin Solid Films, 140, 1986, pp. 277-290. (month unknown).
Katz et al., Properties of titanium nitride thin films deposited by rapid-thermal-low-pressure-metalorganic-chemical-vapor-deposition technique using tetrakis (dimethylamido) titanium precursor, J. Appl. Phys. 70 (7), Oct. 1991, pp. 3666-3677.
Katz et al., Microstructural study of very low resistivity TiN.sub.x films formed by rapid thermal low-pressure metalorganic chemical vapour deposition onto InP, Semicond. Sci. Technol. 8, 1993, pp. 450-458. (month unknown).
Spee et al., Deposition of titanium nitride thin films at low temperatures by CVD using metalorganic and organometallic titanium compounds as precursors, Journal De Physique IV, 3, Aug. 1993, pp. 289-296.
Winter et al., A Single-Source Precursor to Titanium Nitride Thin Films. evidence for the Intermediacy of Imido Complexes in the Chemical Vapor Deposition Process, J. Am. Chem. Soc., 1992, 114, pp. 1095-1097. (month unknown).
Sandhu et al., Metalorganic chemical vapor deposition of TiN films for advanced metallization, Appl. Phys. Lett., 62 (3), Jan. 1993, pp. 240-242.
Ideka et al., TiN Thin Film Prepared by Chemical Vapor Deposition Method Using Cp.sub.2 Ti(N.sub.3).sub.2, Jpn. J. Appl. Phy. 21, Jun., 1993, pp. 3085-3088.
Weiller et al., Flow-Tube Kinetics of Gas-Phase Chemical Vapor Deposition Reactions: TiN from Ti(NMe.sub.2).sub.4 and NH.sub.3, Chem. Mater., 1994, 6, pp. 260-261. (month unknown).
Rees, Jr. et al., Synthesis, Characterization and Evaluation of Zinc-Amides as Potential Dopant Sources for ZnSe OMVPE, Materials Research Society Symposium Proceedings, 282, 1993, pp. 63-67 (month unknown).
Schmitz, J. E., Chemical Vapor Deposition of Tungsten and Tungsten Silicides For VLSI/ULSI Applications, Noyes Publications, Park Ridge, New Jersey (1992), pp. 1-9, 95-109 (month unknown).
Chapple-Sokol Jonathan
Conti Richard
Holloway Karen
Hui Ben C.
Kanjolia Ravi
Beck Shrive
International Business Machines - Corporation
Meeks Timothy H.
Morton International Inc.
LandOfFree
Method for depositing a titanium or tantalum nitride or nitride does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for depositing a titanium or tantalum nitride or nitride , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for depositing a titanium or tantalum nitride or nitride will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1601041