Method for depositing a Tio.sub.2 layer using a periodic and sim

Details Method for depositing a Tio.sub.2 layer using a periodic and sim Method for depositing a Tio.sub.2 layer using a periodic and sim

1989-12-26

1992-01-14

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437225, 437228, 437 2, 118715, 118729, 118730, 136244, 136250, 4272481, H01L 2100, H01L 2102, H01L 2186, H01L 21316

Patent

active

050810693

ABSTRACT:
Method and apparatus are disclosed for depositing a uniform layer of material, such as titanium dioxide, on the surface of an object, such as a silicon sphere of a solar array (7). Component gases are injected at predetermined rates into a heated reaction chamber (5) where they react. Because of the reaction rate and injection velocities of the gases, the reaction is substantially completed at a calculated location inside the reaction chamber (5). The object which is to receive the layer, such as the solar array (7), is placed at the calculated location in the reaction chamber (5). The platform (68) to which the solar array (7) is attached is simultaneously tilted and rotated such that all areas of the surface of the array (7) are uniformly exposed to the titanium dioxide reactant.

REFERENCES:
patent: 3998659 (1976-12-01), Wakefield
patent: 4449880 (1984-05-01), Hartman
patent: 4614835 (1986-09-01), Carson et al.
patent: 4618542 (1986-10-01), Morita et al.
patent: 4637855 (1987-01-01), Witter et al.
patent: 4691076 (1987-09-01), Levine et al.
patent: 4717586 (1988-01-01), Ishihara et al.
Wolf, S. Silicon Processsing for the VLSI Era. vol. 1, Lattice Press, 1986, p. 164.
Fuyuki, T. "Effects of Small Amount of Water on Physical and Electrical Properties of TiO.sub.2 Films Deposited by CVD Method," Electrochem. Soc., Sol. State Sci. and Tech. Jan 1988, pp. 248-250.

Affiliated with

Also associated with

Rating

Method for depositing a Tio.sub.2 layer using a periodic and sim does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for depositing a Tio.sub.2 layer using a periodic and sim, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for depositing a Tio.sub.2 layer using a periodic and sim will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-541385