Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Reexamination Certificate
2007-11-27
2007-11-27
McDonald, Rodney G. (Department: 1753)
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
C204S192150, C204S192380, C427S402000
Reexamination Certificate
active
10651632
ABSTRACT:
A method of physical vapor deposition (PVD) is disclosed in which xenon is used as the operating gas in the vacuum chamber in the deposition of an adhesion layer, preferably silicon, which allows the adhesion layer to be ultra-thin with improved durability over prior art films. The use of argon as is typical in the prior art results in argon atoms being incorporated into the ultra-thin silicon film with deleterious results. In films that are only several angstroms thick, the contamination of the film with argon or other elements can yield a film with reduced adhesion performance and in some cases noble atoms such as argon can escape the film leaving voids or pinholes. The use of the larger and heavier xenon atoms in the vacuum chamber produces a substantially purer film with reduced risk of voids and pinholes. In a preferred embodiment the use of xenon as the operating gas for deposition of the silicon adhesion layer is combined with the use of a filtered cathodic arc (FCA) process to deposit the protective overcoat, preferably carbon based, on a magnetic recording head.
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Hwang Cherngye
Row Eun
Shi Ning
Sun Eric (Yongjian)
Hitachi Global Storage Technologies - Netherlands B.V.
Knight G. Marlin
McDonald Rodney G.
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