Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Reexamination Certificate
2005-02-08
2005-02-08
Chen, Bret (Department: 1762)
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
C427S099300, C427S255290, C427S255370
Reexamination Certificate
active
06852373
ABSTRACT:
A method for depositing a dielectric material on copper apparent on the surface of a structure, by placing the structure in a depositing chamber of CVD type (Chemical Vapor Deposition), adding to the chamber a first gas forming a precursor for the formation of the dielectric material and containing an element able to contaminate copper, adding to the chamber a second gas containing a chemical element intended, together with the element contained in the first gas and able to contaminate copper, to form said dielectric material, the second gas being able to react with the first gas to give the deposit of dielectric material, performing the deposit of dielectric material from the first gas and the second gas, characterized in that the method comprises a step for adding a third gas able to prevent the contamination of copper by said element contained in the first gas.
REFERENCES:
patent: 4910043 (1990-03-01), Freeman et al.
patent: 5831283 (1998-11-01), Batey et al.
patent: 6043167 (2000-03-01), Lee et al.
patent: 6077574 (2000-06-01), Usami
patent: 6270835 (2001-08-01), Hunt et al.
patent: 6372291 (2002-04-01), Hua et al.
Patent Abstracts of Japan, JP 6-244181, Sep. 2, 1994.
Patent Abstracts of Japan, JP 4-350937, Dec. 4, 1992.
Derwent Abstracts, JP 11-026465, Jan. 29, 1999.
Descouts Brigitte
Motte Pascale
Palleau Jean
Torres Joaquim
Chen Bret
Commissariat a l''Energie Atomique
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
STMicroelectronics SA
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