Method for depositing a platinum layer on a silicon wafer

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

438239, 438650, 438658, 438660, H01L 21283, H01L 21477

Patent

active

059813903

ABSTRACT:
The present invention relates to a method of depositing a platinum thin-film on a silicon wafer. The method includes the steps of depositing a platinum layer on an insulating oxide layer under an oxidation atmosphere to form a mixture film consisted of platinum grains, platinum oxide grains and oxygen adhered to those grains (hereinafter, "the mixture film" to be referred as "oxygen containing platinum thin-film"); depositing an additional platinum thin-film to a desired thickness on the oxygen containing platinum thin-film under a complete inert atmosphere; and annealing the silicon substrate at a temperature of 400 to 1,300.degree. C. in order to remove oxygen present in the independent form or in platinum oxide form within the oxygen containing platinum thin-film and to stabilize the entire platinum thin-film. The oxygen containing platinum thin-film layer serves as a glue layer during the depositing step of additional platinum thin-film layer and is converted into pure platinum condition after the annealing step, whereby the silicon substrate substantially does not have any glue layer between the platinum layer and the insulating layer of the silicon substrate.

REFERENCES:
patent: 5164808 (1992-11-01), Evans, Jr. et al.
patent: 5348894 (1994-09-01), Gnade et al.
patent: 5440173 (1995-08-01), Evans, Jr. et al.
patent: 5453347 (1995-09-01), Bullington et al.
patent: 5736422 (1998-04-01), Lee et al.
Oxygen Induced Preferred Orientation of DC Sputtered Platinum--M. Hecq and A. Hecq, J. Vac. Sci. Technol. 18(2), Mar. 1981, p 219-222.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for depositing a platinum layer on a silicon wafer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for depositing a platinum layer on a silicon wafer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for depositing a platinum layer on a silicon wafer will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1455446

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.