Method for depositing a metal gate on a high-k dielectric film

Details Method for depositing a metal gate on a high-k dielectric film Method for depositing a metal gate on a high-k dielectric film

2006-02-06

2010-02-02

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S785000, C438S782000, C257SE21625

Reexamination Certificate

active

07655549

ABSTRACT:
A method to improve a high-k dielectric film and metal gate interface in the fabrication of a MOSFET by depositing a metal gate on a high-k dielectric, the method includes annealing a substrate with a high-k dielectric film deposited thereon in a thermal annealing module and depositing a metal gate material on the annealed substrate in a metal gate deposition module, wherein the annealing step and the depositing step are carried out consecutively without a vacuum break.

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