Method for depositing a low-resistivity titanium-oxynitride (TiO

Details Method for depositing a low-resistivity titanium-oxynitride (TiO Method for depositing a low-resistivity titanium-oxynitride (TiO

1997-06-18

2000-08-22

Fahmy, Wael

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438654, 438656, 438665, 438688, 20419217, H01L 2144

Patent

active

061071951

ABSTRACT:
A method of minimizing intragranular oxidation of TiON and providing a low resistivity film that provides for highly textured metal overlayers. The method provides an in situ diffusion barrier for subsequent high temperature metal deposition or processes. An in situ process eliminates the need for a fortification anneal immediately following the barrier deposition, thus reducing the number of metal processing steps and providing for a more economical process or for subsequent high temperature metal deposition. The surface properties of the TiON allow for improved texture in those metal overlayers as well as low diffusion barrier resistivity.

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