Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2006-02-21
2006-02-21
Zarabian, Amir (Department: 2822)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C438S482000, C438S488000
Reexamination Certificate
active
07001831
ABSTRACT:
A non-Si non-C-based gas is heated by a thermal catalysis body provided in a gas introduction channel, and the heated non-Si non-C-based gas and a material-based gas comprising Si and/or C are separately introduced into a film deposition space through a showerhead having a plurality of gas effusion ports, and in the film deposition space, a plasma space is formed by a nonplanar electrode connected to a radio frequency power supply, thereby forming a film on a substrate. Formation of high-quality Si-based films and C-based films can thus be accomplished at high deposition rate over large area with uniform film thickness and homogeneous quality. Also, highly efficient devices including photoelectric conversion devices represented by solar cells can be manufactured at low-cost by the use of such films.
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Hakuma Hideki
Niira Koichiro
Okui Hiroki
Senta Hirofumi
Duong Khanh
Hogan & Hartson LLP
Kyocera Corporation
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