Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Patent
1993-02-22
1994-04-19
Pianalto, Bernard
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
427249, 4272552, 4272553, 4272555, 4272556, 427571, 427577, 427578, 427579, 427598, B05D 306
Patent
active
053044070
ABSTRACT:
An apparatus for depositing a film at atmospheric pressure and a method used for this formation are offered. Radicals are produced inside a space in which an electric discharge is induced. This space is shrouded in a purge gas to isolate the space from the outside air, for preventing the radicals traveling to the surface of a substrate from being affected by the outside air. A magnetic field and a bias voltage are made to act on the produced plasma, so that the radicals can reach the substrate surface with greater ease. The arriving radicals promote the formation of the film on the surface of the substrate.
REFERENCES:
patent: 5053243 (1991-10-01), Schuurmans et al.
patent: 5126164 (1992-06-01), Okazaki et al.
Hayashi Shigenori
Yamazaki Shunpei
Pianalto Bernard
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Method for depositing a film does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for depositing a film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for depositing a film will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-18704