Method for depositing a diffusion barrier for copper...

Details Method for depositing a diffusion barrier for copper... Method for depositing a diffusion barrier for copper...

2007-03-05

2010-06-08

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Reexamination Certificate

active

07732314

ABSTRACT:
Methods for forming a metal diffusion barrier on an integrated circuit include at least four operations. The first operation deposits barrier material via PVD, ALD or CVD to provide some minimal coverage. The second operation deposits an additional barrier material and simultaneously etches a portion of the barrier material deposited in the first operation. The third operation deposits barrier material via PVD, ALD or CVD to provide some minimal coverage especially over the bottoms of unlanded vias. The forth operation deposits a metal conductive layer. Controlled etching is used to selectively remove barrier material from the bottom of vias, either completely or partially, thus reducing the resistance of subsequently formed metal interconnects. In addition, techniques to protect the bottoms of the unlanded vias are described.

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