Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-04-26
2005-04-26
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S680000, C438S785000, C427S585000
Reexamination Certificate
active
06884719
ABSTRACT:
A method for depositing a high-k dielectric coating onto a substrate, such as a semiconductor wafer, is provided. The substrate is subjected to one or more reaction cycles. For instance, in a typical reaction cycle, the substrate is heated to a certain deposition temperature. Thereafter, in one embodiment, one or more reactive organo-metallic gas precursors are supplied to the reactor vessel. An oxidizing gas is also supplied to the substrate at a certain oxidizing temperature to oxidize and/or densify the layers. As a result, a metal oxide coating is formed that has a thickness equal to at least about one monolayer, and in some instances, two or more monolayers. The dielectric constant of the resulting metal oxide coating is often greater than about 4, and in some instance, is from about 10 to about 80.
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Bloom Robin
Chang Jane
Kepten Avishai
Levy Sagy
Lin You-Sheng
Dority & Manning P.A.
Ghyka Alexander
Mattson Technology Inc.
The Regents of the University of California
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