Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1997-05-23
2000-05-16
McDonald, Rodney
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419226, 430 5, 427523, 427526, C23C 1434, C23C 1448
Patent
active
060632461
ABSTRACT:
A method for depositing carbon films on membranes used in masks for X-ray or corpuscular projection, e.g. electron or ion beam, lithography is proposed in which sputtering is used and the membranes serving as sputter substrates are positioned in the off-axis configuration relative to the sputter targets. The carbon films thus produced have a compressive stress of the order of 10 MPa or below. For modifying the properties of carbon films after deposition, e.g. the deactivation of chemically reactive sites or stabilization of stress, ion bombardment with helium ions can be employed. This method anticipates changes in the film due to initial irradiation and serves to reach a plateau in which the stress varies only a little, i.e. within about 1 MPa or less.
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Torres Bucardo Jose Leonel
Wasson James Richard
Wolfe John Charles
McDonald Rodney
University of Houston
Vigil Thomas R.
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