Method for delineating a conducting element disposed on an...

Details Method for delineating a conducting element disposed on an... Method for delineating a conducting element disposed on an...

2004-03-01

2008-09-16

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S592000, C438S657000, C257SE21206

Reexamination Certificate

active

07425496

ABSTRACT:
A conducting layer is deposited on an insulating layer disposed on a substrate. A mask is formed on at least one area of the conducting layer, thus delineating in the conducting layer at least one complementary area not covered by the mask. The complementary areas of the conducting layer are rendered insulating by oxidation. Oxidation can comprise oxygen implantation and/or thermal oxidation. The material of the conducting layer and the oxygen can form a volatile oxide evaporating partly or totally. The conducting layer is preferably formed by first and second conducting layers. Thus, oxidation can be performed, after the mask has been removed, so that the surface of the second conducting layer is oxidized on the side walls and on the front face.

REFERENCES:
patent: 3867148 (1975-02-01), O'Keeffe et al.
patent: 4666556 (1987-05-01), Fulton et al.
patent: 6331490 (2001-12-01), Stevens et al.
patent: 6451657 (2002-09-01), Gardner et al.
patent: 2001/0020723 (2001-09-01), Gardner et al.
patent: 2002/0132394 (2002-09-01), Ku et al.
patent: A 2002-134544 (2002-05-01), None
“Defect-free Si in Regrown Simox Structures,” vol. 35, No. 3, pp. 60-61, Aug. 1992.

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