Method for defining the initial state of static random...

Static information storage and retrieval – Read/write circuit

Reexamination Certificate

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C365S154000, C365S227000, C257S392000, C257S393000

Reexamination Certificate

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06906962

ABSTRACT:
A method for predetermining the initial state of the memory cells of a static random access memory such that when the memory is powered up the predetermined initial states are attained. The initial states can be predetermined by modifying one or more physical or operational parameters of the MOSFETS comprising the memory cells.

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patent: 0 530 376 (1993-03-01), None

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