Method for deep trench etching through a buried insulator layer

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

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C438S717000, C438S719000, C438S723000, C438S724000, C438S735000, C438S736000, C438S738000, C438S743000, C216S047000, C216S051000, C216S074000, C216S079000, C216S080000

Reexamination Certificate

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06995094

ABSTRACT:
A method for etching a silicon on insulator (SOI) substrate includes opening a hardmask layer formed on an SOI layer, and etching through the SOI layer, a buried insulator layer underneath the SOI layer, and a bulk silicon layer beneath the buried insulator layer using a single etch step.

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Wolf, Silicon Processing for the VLSI Era, 2002, Lattice Press, vol. 4, pp. 535-536.
Wolf et al., Silicon Processing for the VlSI Era, 1986, Lattice Press, vol. 1, pp. 523-524.

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