Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-02-07
2006-02-07
Norton, Nadine G. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S717000, C438S719000, C438S723000, C438S724000, C438S735000, C438S736000, C438S738000, C438S743000, C216S047000, C216S051000, C216S074000, C216S079000, C216S080000
Reexamination Certificate
active
06995094
ABSTRACT:
A method for etching a silicon on insulator (SOI) substrate includes opening a hardmask layer formed on an SOI layer, and etching through the SOI layer, a buried insulator layer underneath the SOI layer, and a bulk silicon layer beneath the buried insulator layer using a single etch step.
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Ho Herbert L.
Kumar Mahender
Messenger Brian
Steigerwalt Michael D.
Cantor & Colburn LLP
Chen Eric B.
Cioffi James J.
International Business Machines - Corporation
Norton Nadine G.
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