Method for damage etching the back side of a semiconductor disk

Details Method for damage etching the back side of a semiconductor disk Method for damage etching the back side of a semiconductor disk

1996-02-21

1997-12-02

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566431, 15665911, 216 52, 216 67, 437226, 437225, H01L 2100

Patent

active

056931824

ABSTRACT:
A method for making large scale integrated circuits on a disklike semiconductor substrate includes grinding a disk thin enough to be able to be sawn apart into individual chips. A damage zone caused by the grinding on a back side of the wafer is removed by etching while protecting a front side of the wafer, prior to sawing. The etching is carried out in the form of a microwave or high-frequency-excited downstream plasma etching process using fluorine compounds in an etching gas.

REFERENCES:
patent: 4946547 (1990-08-01), Palmour et al.
patent: 5075256 (1991-12-01), Wang et al.
Patent Abstract of Japan No. JP 3-272140 (Otake), Dec. 3, 1991.
IEEE Publ., vol. 13, No.3, Sep. 1990, Nishiguchi et al., pp.528-533, "Mass Production Back-Grinding/Wafer-Thinning Technology for GaAs Dev."
American Institute of Physics Publ. 54 (25), 9 Jun. 1989, pp. 2553-2555, (Ohkawa et al.) "Homoepitaxial growth of ZnSe on dry-etched substrates".
Solid State Technology Publ. Oct. 1994, (Boitnott), pp. 51,52,56,58, "Downstream Plasma Processing: Consideration for selective etch and other process".
Motorla, Inc. Publ. vol. 23, Oct. 1994, (Shumate et al.), p. 8, "Silicon Wafer Thinning and Dicing Round or Non Orthogonal Die Using Dry Etching".

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