Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2001-12-04
2003-03-11
Niebling, John F. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S486000
Reexamination Certificate
active
06531348
ABSTRACT:
This application claims the benefit of Korean Application No. P2000-86333 filed on Dec. 29, 2000, which is hereby incorporated by reference.
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a method for crystallizing amorphous silicon, and more particularly, to method for crystallizing amorphous silicon and fabricating a thin film transistor using the crystallized silicon.
2. Discussion of the Related Art
Due to a rapid development in information technologies, display devices are developed in accordance with the pace of the technology development. Display devices process and display a great deal of information. A cathode ray tube (CRT) has served as a mainstream of the display devices. To meet the needs of the current technology break-through, a flat panel display device having small size, light weight, and low power consumption is a more important area in research.
In general, liquid crystal display (LCD) devices make use of optical anisotropy and polarization characteristics of liquid crystal molecules to control an arrangement in orientation. The arrangement direction of the liquid crystal molecules can be controlled by applying an electric field. Accordingly, when the electric field is applied to the liquid crystal molecules, the arrangement of the liquid crystal molecules changes. Since refraction of incident light is determined by the arrangement of the liquid crystal molecules, display of image data can be controlled by changing the electric field applied to the liquid crystal molecules.
As an active layer of a thin film transistor (TFT) in an array substrate for use in liquid crystal display (LCD) devices, amorphous silicon (a-Si) is widely used. This is because amorphous silicon can be formed on the low cost glass substrate at a low temperature in fabricating a large LCD panel. However, a driving circuit is required to drive the thin film transistors including amorphous silicon.
As well known, the liquid crystal display device includes an array substrate, and the array substrate is electrically connected to large scale integrated circuit (LSIC) fabricated by the single crystal silicon, using a tape automated bonding (TAB) method. The driving circuit, however, is very expensive, and thus the liquid crystal display including the large scale integration costs also high.
Accordingly, the thin film transistor (TFT) formed of polycrystalline silicon (poly-Si) for fabricating a liquid crystal display device has been researched and developed. In the liquid crystal display device employing poly-Si in a thin film transistor, the thin film transistor and the driving circuit can be formed on the same substrate. Thus, it is not necessary for the driving circuit to be connected to the thin film transistor. Further, it is easy to obtain a fast response time in display when using the polycrystalline silicon as an element of the TFT rather than the amorphous silicon as an element of the TFT. Namely, a field effect mobility in poly-Si is 100 to 200 times faster than that in a-Si. Additionally, the poly-Si has a good stability against light and temperature variations.
In the view of the foregoing, various methods for forming the poly-Si are well known. Of the different types of methods for forming poly-Si, a method for crystallizing a-Si after depositing a-Si using plasma enhanced chemical vapor deposition (PECVD) or low pressure chemical vapor deposition (LPCVD) is widely known and employed in the crystallization of a-Si. Furthermore, as a method for forming poly-Si from a-Si, for example, a solid phase crystallization (SPC), an excimer laser crystallization (ELC) or a metal induced crystallization (MIC) has been employed.
In the process of the solid phase crystallization (SPC), amorphous silicon is exposed to heat approaching about 600 degrees celsius for at least several hours. Namely, the solid phase crystallization (SPC) is to change amorphous silicon into polycrystalline silicon by a heat-treatment at a high temperature for a long time in a furnace. It requires forming a buffer layer on the quartz substrate having a thermal endurance over temperatures of 600 degrees celsius (° C.) in order to prevent the quartz substrate from diffusing out impurities. The amorphous silicon layer is deposited on the buffer layer and introduced by the heat-treatment.
The solid phase crystallization (SPC) method, however, results in an irregular grain growth and irregular grain boundaries so that the gate insulating layer on the polycrystalline silicon layer grows erratically, thereby lowering breakdown voltage of the device. In addition, since the grain sizes of the polycrystalline silicon are excessively non-uniform, electrical characteristics, such as current and a threshold voltage, are not good. Further, a costly quartz substrate should be employed.
The excimer laser crystallization (ELC) process has also been used with some advantages in annealing amorphous silicon. Laser allows areas of the amorphous film to be exposed to very high temperatures for very short periods of time. Theoretically, this offers a possibility of annealing the amorphous silicon at an optimum temperature (less than 400 degrees celsius) without degrading the transparent substrate upon which it is mounted. However, use of this method has been limited by the lack of control over some of the process steps. Typically, an aperture size of the laser is relatively small. The aperture size, power of the laser, and a thickness of the film may require multiple laser passes, or shots, to complete an annealing process. Since it is difficult to precisely control the laser, the multiple shots introduce non-uniformities into the annealing process. Further, the substrates must be annealed serially, instead of in a furnace. TFTs made by this method are significantly more expensive than those made by direct deposition or SPC.
A metal induced crystallization is another example of a method for crystallizing amorphous silicon at a low temperature. In the metal induced crystallization, metal, such as nickel (Ni), is disposed on the amorphous silicon layer, and then lowers the crystallization temperature of the amorphous silicon.
For a better understanding of the metal induced crystallization (MIC) method, detailed descriptions are made with reference to the accompanying drawings as follows.
FIGS. 1A
to
1
C are perspective views showing crystallization steps of an amorphous silicon layer using a field effect metal induced crystallization (FEMIC) method according to a related art.
Referring to
FIG. 1A
, a buffer layer
2
is formed on a substrate
1
, and then an amorphous silicon layer
4
is formed on the buffer layer
2
. The buffer layer
2
is generally formed of silicon oxide (SiO
2
) and protect the amorphous silicon layer
4
from the alkali substances. In
FIG. 1A
, metal clusters
8
, such as nickel (Ni), paladium (Pd), iron (Fe), and cobalt (Co), is deposited on the entire surface of the amorphous silicon layer
4
by evaporation, sputtering, CVD or using a metal solution. This metal is called a metal catalyst and heated by a high density voltage.
FIG. 1B
shows a step of crystallizing the amorphous silicon layer
4
. As shown, a pair of electrodes
10
are disposed at both sides of the amorphous silicon layer
4
including the metal clusters
8
thereon. Thereafter, a direct current having a high voltage is supplied to the electrodes
10
. While applying the direct current having high voltage to the electrodes
10
, the substrate
1
is then subjected to a thermal treatment with a temperature of approximately 500 degrees celsius (° C.). As a result, a polycrystalline silicon layer
5
of
FIG. 1C
is formed over the substrate
1
.
During the above-mentioned field enhanced metal induced crystallization (FEMIC) method, the metal catalyst such as nickel (Ni) on the amorphous silicon layer
4
begins to react with the amorphous silicon at a temperature of about 200 degrees celsius (° C.), and then is converted into silicide. At the beginning of the reaction, nickel can be easily silicified by heat
Kim Hae-Yeol
Kim Jong-Il
Kim Se-June
Isaac Stanetta
LG.Philips LCD Co., LTD
Niebling John F.
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