Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-12-03
2000-08-01
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438598, 438618, 438633, 438638, 438667, 438671, 438689, 438690, 438691, 438693, 438706, 438723, 438743, 438928, 438959, H01L 214763
Patent
active
060966351
ABSTRACT:
A method for creating via holes in a chip or a plurality of chips of a wafer is disclosed. The method is performed by using a pre-patterned transparent mask on the back of the chip or chips, and bombarding the chip(s) through the positioning holes on the transparent mask that correspond to the pre-formed pattern, with accelerated particles. According to this method, via holes can be created from the back of the chip(s) without interfering with the existing IC structure of the chip(s). The present method is highly efficient because a number of via holes can be formed simultaneously by using a large pre-pattered mask to cover the entire wafer. In addition, the present method is cost-effective because no precision apparatus is required.
REFERENCES:
patent: 5858808 (1999-01-01), Igel et al.
patent: 5943588 (1999-08-01), Watrobski et al.
patent: 6010956 (2000-01-01), Takiguchi et al.
Cheng Shiang Ching
Chou Chin-Yi
Mou Tse-Chi
Yang Arnold Chang-Mou
Microjet Technology Co., Ltd.
Niebling John F.
Simkovic Viktor
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