Method for creating ultra-high-density holes and metallization

Details Method for creating ultra-high-density holes and metallization Method for creating ultra-high-density holes and metallization

2009-01-29

2011-10-04

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C257SE21023

Reexamination Certificate

active

08030215

ABSTRACT:
Methods and apparatuses directed to high density holes and metallization are described herein. A method may include providing a dielectric layer including a plurality of holes, forming a fill material over a top surface of the dielectric layer and in the plurality of holes, and reflowing the fill material to substantially remove any voids in the plurality of holes. Other embodiments are also described.

REFERENCES:
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patent: 2007/0048674 (2007-03-01), Wells
patent: 2007/0207620 (2007-09-01), Doebler
patent: 2007/0254472 (2007-11-01), Hayashi
patent: 2009/0142902 (2009-06-01), Subramanian

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