Static information storage and retrieval – Systems using particular element – Semiconductive
Reexamination Certificate
2010-05-27
2011-12-06
Pham, Ly D (Department: 2827)
Static information storage and retrieval
Systems using particular element
Semiconductive
C365S115000, C438S093000, C257SE31015
Reexamination Certificate
active
08072801
ABSTRACT:
A method of forming a diode comprises the steps of forming an extraction region of a first conductivity type, forming an active region of a second conductivity type that is opposite the first conductivity type, and forming an exclusion region of the second conductivity type to be adjacent the active region. The active region is formed to be adjacent to the extraction region and along a reverse bias path of the extraction region and the exclusion region does not resupply minority carriers while removing majority carriers. At least one of the steps of forming the exclusion region and forming the extraction region includes the additional step of forming a barrier that substantially reduces the flow of the carriers that flow toward the active region, but does not rely on a diffusion length of the carriers to block the carriers.
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Grein Christoph H.
Sivananthan Sivalingam
Velicu Silviu
EPIR Technologies, Inc.
Momkus McCluskey, LLC
Perkins Jefferson
Pham Ly D
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