Method for creating neo-wafers from singulated integrated...

Details Method for creating neo-wafers from singulated integrated... Method for creating neo-wafers from singulated integrated...

2006-02-14

2006-02-14

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S459000, C438S462000

Reexamination Certificate

active

06998328

ABSTRACT:
A neo-wafer made from integrated circuit die and methods for making a neo-wafer are disclosed. Recesses are formed on a substrate and a dielectric layer with conductive pads is created for the receiving of one or more die. Die are flip-chip bonded to the conductive pads and all voids under-filled. The neo-wafer is thinned to expose the dielectric and the conductive pads exposed, creating a neo-wafer.

REFERENCES:
patent: 6507119 (2003-01-01), Huang et al.
patent: 6541352 (2003-04-01), Wachtler
patent: 6548330 (2003-04-01), Murayama et al.
patent: 6573592 (2003-06-01), Bolken
patent: 6881648 (2005-04-01), Chen et al.
patent: 2002/0096743 (2002-07-01), Spooner et al.
patent: 2003/0127735 (2003-07-01), Pepe et al.
patent: 2003/0183950 (2003-10-01), Bolken
patent: 2003/0194832 (2003-10-01), Lopata et al.
patent: 2004/0104408 (2004-06-01), Moden et al.
patent: 2004/0155325 (2004-08-01), Ma et al.
patent: 2004/0178515 (2004-09-01), Hilton et al.

Affiliated with

Also associated with

Rating

Method for creating neo-wafers from singulated integrated... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for creating neo-wafers from singulated integrated..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for creating neo-wafers from singulated integrated... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3671438