Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design
Reexamination Certificate
2006-07-11
2006-07-11
Lin, Sun James (Department: 2825)
Computer-aided design and analysis of circuits and semiconductor
Nanotechnology related integrated circuit design
C716S030000
Reexamination Certificate
active
07076761
ABSTRACT:
A method for creating charged-particle-beam exposure data containing a description of an exposure sequence of character patterns to perform exposure of a charged-particle-beam according to a character projection technique, comprising selecting first or second values as a parameter to transfer one character pattern and then transferring a subsequent character pattern, the first value regarding performance of a shaping deflector which deflects the charged particle beam so that the charged particle beam is applied to an arbitrarily character aperture formed in a CP aperture mask and a character beam having the shape of the character aperture is thereby created, and the second value regarding performance of an objective deflector which deflects the character beam so that the character beam is applied to an arbitrarily position of the deflection region of the specimen, and determining the exposure sequence of the character patterns in the deflection region in accordance with the selected parameter.
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Inanami, R. et al., “Charged Particle Beam Exposure Method And Method For Producing Charged Particle Beam Exposure Data”, U.S. Appl. No. 10/255,830, filed Sep. 27, 2002.
Inanami, R. et al., “Exposure Pattern Data Generation Apparatus Associated With Standard Cell Library And Charged Beam Exposure”, U.S. Appl. No. 09/817,270, filed Mar. 27, 2001.
Ando Atsushi
Ichioka Yoshikazu
Inanami Ryouichi
Nakai Kazuhiro
Dainippon Screen MFG. Co., Ltd.
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Lin Sun James
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