Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-02-14
2006-02-14
Thomas, Tom (Department: 2815)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S643000, C438S653000, C438S677000, C257S762000
Reexamination Certificate
active
06998343
ABSTRACT:
A method for forming damascene interconnect copper diffusion barrier layers includes implanting calcium into the sidewalls of the trenches and vias. The calcium implantation into dielectric layers, such as oxides, is used to prevent Cu diffusion into oxide, such as during an annealing process step. The improved barrier layers of the present invention help prevent delamination of the Cu from the dielectric.
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Barth William K.
Cui Hao
Lakshminarayanan Sethuraman
Sun Grace
Sun Sey-Shing
Beyer Weaver & Thomas LLP
LSI Logic Corporation
Richards N. Drew
Thomas Tom
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