Data processing: measuring – calibrating – or testing – Calibration or correction system – Length – distance – or thickness
Patent
1996-11-08
1999-04-06
Shah, Kamini S.
Data processing: measuring, calibrating, or testing
Calibration or correction system
Length, distance, or thickness
118724, 702136, 702170, 36452835, G06F 1900, G01C 2500
Patent
active
058930507
ABSTRACT:
A method for correcting a thin-film formation program of semiconductor device includes the steps of measuring a thin-film thickness formed by thin-film formation equipment controlled by a thin-film formation program while cooling a wafer on which a thin-film has been formed; transforming the measured thickness into an electrical signal (d.sub.m); transforming a target thickness into a standard electrical signal (d.sub.0); comparing the electrical signal (d.sub.m) with the standard electrical signal (d.sub.0), and outputting a first signal to the thin-film formation equipment if the electrical signal (d.sub.m) is less than the standard electrical signal (d.sub.0) and outputting a second signal to the thin-film formation equipment if the electrical signal (d.sub.m) is greater than the standard electrical signal (d.sub.0). The first signal increases, and the second signal decreases the process variables of thin-film formation program. As a result, thickness uniformity can be maintained without error or time delay, by automatically correcting the thin film formation program.
REFERENCES:
patent: 5120966 (1992-06-01), Kondo
patent: 5148710 (1992-09-01), Gudehus et al.
patent: 5285075 (1994-02-01), Kurokawa
patent: 5571749 (1996-11-01), Matsuda et al.
Jeoun Ill-hwan
Park Byung-Suk
Samsung Electronics Co,. Ltd.
Shah Kamini S.
LandOfFree
Method for correcting thin-film formation program of semiconduct does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for correcting thin-film formation program of semiconduct, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for correcting thin-film formation program of semiconduct will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1381130