Method for correcting for asymmetry of threshold voltage shifts

Details Method for correcting for asymmetry of threshold voltage shifts Method for correcting for asymmetry of threshold voltage shifts

2008-06-02

2009-06-02

Patel, Paresh (Department: 2829)

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

C324S763010, C324S1540PB

Reexamination Certificate

active

07541829

ABSTRACT:
A method for correcting of asymmetric shifts in threshold voltage of transistors caused by effects such as negative-bias temperature instability (NBTI) during burn-in. The method may include providing logic patterns to an integrated circuit, such that devices that were stressed during burn-in are relaxed, and devices that suffered less stress during burn-in are stressed.

REFERENCES:
patent: 6521469 (2003-02-01), La Rosa et al.
patent: 7009905 (2006-03-01), Aipperspach et al.
patent: 7164612 (2007-01-01), Eleyan et al.
patent: 7203264 (2007-04-01), Lo et al.
patent: 2008/0036487 (2008-02-01), Bradley et al.
patent: 2008/0186075 (2008-08-01), Kim et al.
“Eliminating Negative Bias Instability in Field Effect Transistor Device” Jan. 1, 1975 IBM Technical Bulletin NN75012316, two pages.
Li, Xiaojum “Deep Submicron CMOS VLSI Circuit Reliability Modeling, Simulation and Design” Dissertation, University of Maryland, College Park, 2005, (211 pages).

Affiliated with

Also associated with

Rating

Method for correcting for asymmetry of threshold voltage shifts does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for correcting for asymmetry of threshold voltage shifts, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for correcting for asymmetry of threshold voltage shifts will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4145687