Method for controlling voltage in non-volatile memory systems

Details Method for controlling voltage in non-volatile memory systems Method for controlling voltage in non-volatile memory systems

2006-12-29

2008-11-04

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S211000, C365S185230, C365S189090, C365S189110

Reexamination Certificate

active

07447093

ABSTRACT:
Method for controlling voltage in a non-volatile memory system is provided. The method includes selecting a first input value for a voltage generator system operating in one of a plurality of modes, the first input value controlling a temperature dependent component of a voltage applied to a memory cell; and selecting a second input value for the voltage generator system operating in one of the plurality of modes, the second input value controlling a temperature independent component of the voltage applied to the memory cell. The temperature dependent component of the voltage applied to the memory cell and the temperature independent component of the voltage applied to the memory cell are controlled independently in response to the first input value and the second input value.

REFERENCES:
patent: 5864504 (1999-01-01), Tanzawa et al.
patent: 6026023 (2000-02-01), Tonda
patent: 6205074 (2001-03-01), Van Buskirk et al.
patent: 6314026 (2001-11-01), Satoh et al.
patent: 6452437 (2002-09-01), Takeuchi et al.
patent: 6560152 (2003-05-01), Cernea
patent: 6667904 (2003-12-01), Takeuchi et al.
patent: 6801454 (2004-10-01), Wang et al.
patent: 6807111 (2004-10-01), Marotta et al.
patent: 6859395 (2005-02-01), Matsunaga et al.
patent: 6870766 (2005-03-01), Cho et al.
patent: 7054195 (2006-05-01), Matsunaga
patent: 7057958 (2006-06-01), So et al.
patent: 7180211 (2007-02-01), Sinha et al.
patent: 7184313 (2007-02-01), Betser et al.
patent: 7266031 (2007-09-01), Kim et al.
patent: 7313044 (2007-12-01), Fuhrmann et al.
patent: 7342831 (2008-03-01), Mokhlesi et al.
patent: 2006/0133143 (2006-06-01), Hosono
patent: 2007/0291566 (2007-12-01), Mokhlesi et al.
patent: 2007/0291567 (2007-12-01), Mokhlesi et al.
patent: 2008/0031066 (2008-02-01), Nandi
patent: 1253597 (2002-10-01), None
Notice of Allowance dated Jun. 16, 2008 in U.S. App. No. 11/499,067.

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