Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-10-31
2006-10-31
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21593
Reexamination Certificate
active
07129169
ABSTRACT:
A method for forming a metal silicide contact for a semiconductor device includes forming a refractory metal layer over a substrate, including active and non-active area of said substrate, and forming a cap layer over the refractory metal layer. A counter tensile layer is formed over the cap layer, wherein the counter tensile layer is selected from a material such that an opposing directional stress is created between the counter tensile layer and the cap layer, with respect to a directional stress created between the refractory metal layer and the cap layer.
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Hon Wong Keith Kwong
Jones Bradley P.
Lavoie Christian
Purtell Robert J.
Wang Yun-Yu
Cantor & Colburn LLP
Coleman W. David
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