Method for controlling thickness of single crystal thin-film lay

Details Method for controlling thickness of single crystal thin-film lay Method for controlling thickness of single crystal thin-film lay

1991-11-27

1993-06-29

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156657, 156662, 156345, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

052230805

ABSTRACT:
A method for controlling the thickness of a single crystal thin-film silicon layer bonded on a dielectric substrate in a SOI substrate thereby effecting conversion of said single crystal silicon layer to a thin film is disclosed. To be more precise, said method comprises selectively and hypothetically dividing the entire surface of said single crystal silicon layer destined to undergo a chemical vapor-phase corrosion reaction for the sake of said conversion into necessary minute sections and, at the sametime, taking preparatory measurement of the thickness of said single crystal silicon layer in each of said minute sections, and effecting on each of said minute sections said conversion to a thin film by a chemical vapor-phase corrosion reaction adjusted in accordance with the measured thickness of layer. The conversion to a thin film is attained with the dispersion of thickness of the single crystal silicon layer controlled with high accuracy.

REFERENCES:
patent: 4367044 (1983-01-01), Booth et al.
patent: 4717446 (1988-01-01), Nagy et al.
patent: 5131752 (1992-07-01), Yu et al.

Affiliated with

Also associated with

Rating

Method for controlling thickness of single crystal thin-film lay does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for controlling thickness of single crystal thin-film lay, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for controlling thickness of single crystal thin-film lay will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1752529