Method for controlling the thickness of a thin crystal film

Details Method for controlling the thickness of a thin crystal film Method for controlling the thickness of a thin crystal film

1987-09-02

1989-08-08

Doll, John

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156610, 156611, 156614, 156DIG102, 156DIG103, 156DIG70, 422108, 437936, C30B 2516

Patent

active

048550132

ABSTRACT:
A method for controlling the thickness of a thin crystal film which is grown in a vacuum atmosphere, comprising the steps of: generating an electron beam in the vacuum atmosphere; directing the electron beam thus generated to a crystal being grown to obtain a diffraction pattern of the crystal; detecting the variations in time of the intensity of the diffraction pattern thus obtained; obtaining the number of oscillations from the variations thus detected; and interrupting the growth of the crystal in synchronism with the oscillations of the intensity when the number reaches a predetermined number. The composition ratio of a mixed crystal can be also determined by the ratio among the frequency of oscillations of each crystal which constitutes the mixed crystal. The oscillations of the intensity of the RHEED pattern can be observed more than 400 times so that the thickness of the grown thin crystal film can be measured with the accuracy higher than 1000 .ANG. in terms of the mono-layer.

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