Method for controlling the etch profile of an aperture formed th

Details Method for controlling the etch profile of an aperture formed th Method for controlling the etch profile of an aperture formed th

1996-04-29

1997-07-29

Tsai, Jey

Fishing, trapping, and vermin destroying

437 52, 437919, 437947, 437228SE, 437228PE, H01L 2170, H01L 2700

Patent

active

056521723

ABSTRACT:
A method for forming an aperture with a uniform void-free sidewall etch profile through a multi-layer insulator layer. There is formed upon a semiconductor substrate a multi-layer insulator layer which has a minimum of a first insulator layer and a second insulator layer. The second insulator layer is formed upon the first insulator layer. There is then etched through a first etch method a first aperture completely through the second insulator layer. The first etch method has: (1) a first perpendicular etch selectivity ratio for the second insulator layer with respect to the first insulator layer of at least about 4:1; and (2) a lateral:perpendicular etch selectivity ratio for the second insulator layer of from about 0.5:1 to about 1:1. The first aperture is then etched through a second etch method to form a second aperture completely through the second insulator layer and the first insulator layer. The second etch method has: (1) a second perpendicular etch selectivity ratio for the second insulator layer with respect to the first insulator layer of no greater than about 2:1; and (2) a lateral etch selectivity ratio of the second insulator layer with respect to the first insulator layer of from about 0.5:1 to about 1:1. The second aperture has a uniform void-free sidewall etch profile.

REFERENCES:
patent: 4814041 (1989-03-01), Auda
patent: 5225376 (1993-07-01), Feaver et al.
patent: 5322809 (1994-06-01), Moslehi
patent: 5342798 (1994-08-01), Huang
patent: 5354716 (1994-10-01), Pors et al.
patent: 5464782 (1995-11-01), Koh

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