Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-11-13
2007-11-13
Everhart, Caridad (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21540, C257SE21545, C438S404000, C438S633000
Reexamination Certificate
active
11035188
ABSTRACT:
According to one exemplary embodiment, a method includes planarizing a layer of polysilicon situated over field oxide regions on a substrate to form polysilicon segments, where the polysilicon segments have top surfaces that are substantially planar with top surfaces of the field oxide regions, and where the field oxide regions have a first height and the polysilicon segments have a first thickness. The method further includes removing a hard mask over a peripheral region of the substrate. According to this exemplary embodiment, the method further includes etching the polysilicon segments to cause the polysilicon segments to have a second thickness, which causes the top surfaces of the polysilicon segments to be situated below the top surfaces of the field oxide regions. The polysilicon segments can be etched by using a wet etch process. The polysilicon segments are situated in a core region of the substrate.
REFERENCES:
patent: 6010942 (2000-01-01), Chien et al.
patent: 6054733 (2000-04-01), Doan et al.
patent: 2003/0071306 (2003-04-01), Huang et al.
Achuthan Krishnashree
Kim Unsoon
Regalado Patriz C.
Sahota Kashmir
Advanced Micro Devices , Inc.
Everhart Caridad
Farjami & Farjami LLP
Spansion LLC
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