Method for controlling plasma processes

Details Method for controlling plasma processes Method for controlling plasma processes

1992-10-19

1994-01-11

Thomas, Tom

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156626, 427534, 427535, 427575, H01L 21306

Patent

active

052777529

ABSTRACT:
In accordance with the invention, a plasma generated within a plasma confinement chamber for use in manufacturing semiconductor devices is controlled by monitoring both the neutral gas pressure P and the neutral gas temperature T. The process parameters P and T are then adjusted to control P/T.sup.n. In a preferred embodiment the pressure is adjusted to maintain P/T constant by adjusting the gas flow rate or the outlet pumping speed. The result is a plasma exhibiting enhanced stability over prolonged periods of time.

REFERENCES:
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patent: 4340456 (1982-07-01), Robinson
patent: 4935303 (1990-06-01), Ikoma
patent: 5133830 (1992-07-01), Asaka
patent: 5145554 (1992-09-01), Seki
S. Wolf, Silicon Processing forth VLSI Era, 1990, Lattic Press, pp. 160-176, 542-547, 568-572, 574-577.
Vossen & Kern, Thin Film Processes, 1988, Academic Press, Inc. pp. 338-357, 401-481, 499-512.
K. Wust, "Electron temperature and plasma density of capacitive rf-discharges in noble gases", Rev. Sci. Instrum. vol. 63, pp. 2581-2583, (1992).

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