Method for controlling oxygen content of silicon crystals using

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156601, 1566171, 1566191, 1566204, 156DIG80, 422249, C30B 1506

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active

051787202

ABSTRACT:
A Czocharalski method for producing silicon rods wherein a single crystal silicon rod is pulled from a silicon melt contained in a coaxial crucible. In the method, the rod and crucible are rotated in opposite directions about their axes, the rotation rate of the rod being greater than the rotation rate of the crucible as the rod is grown. The rotation rate of the crucible is increased as the length of the rod increases. A magnetic field that is substantially rotationally symmetrical about the axis of the rod is imposed upon the silicon melt until a fraction of the silicon melt is solidified, the magnetic field having components which perpendicularly intersect the bottom and side walls of the crucible and a component which perpendicularly intersects the surface of the silicon melt. The average magnetic component which perpendicularly intersects the molten silicon surface is about zero, and the intensity of the magnetic field component which perpendicularly intersects the bottom and side walls of the crucible is decreased as the fraction of silicon melt solidified increases.

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patent: 4830703 (1989-05-01), Matsutani
patent: 4849188 (1989-07-01), Takasu et al.
Hirata et al., "Silicon Crystal Growth in a Cusp Magnetic Field", Journal of Crystal Growth, 96 (1989) pp. 747-755.
Hirata et al., "Homogeneous Increase in Oxygen Concentration in Czochralski Silicon Crystals By a Cusp Magnetic Field", Journal of Crystal Growth, 98 (1989) pp. 777-781.
R. W. Series, "Effect of a Shaped Magnetic Field on Czochralski Silicon Growth", Journal of Crystal Growth 97 (1989) pp. 92-98.

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