Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1981-03-09
1983-02-01
Bernstein, Hiram
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156DIG66, C30B 904
Patent
active
043714200
ABSTRACT:
In a process for growth of a layer of semiconductor material by precipitation from a solution of the semiconductor material in a solvent by liquid phase epitaxial growth (LPE), the improvement is the step of adding from approximately 0.01% to 1.0% by weight of a material which forms a stable oxide or sulfide and is soluble in the solvent to the solution prior to the step of precipitating the semiconductor layer to eliminate the deleterious effects of residual oxygen. A relatively short annealing time is required to dissolve the addition in the solvent and allow the addition to react with dissolved oxygen or other impurities before a conventional LPE growth process may be initiated, although high temperature anneals of varying length may precede or follow the addition of the oxide-forming or sulfide-forming material. Zirconium, titanium, vanadium, scandium, yttrium, and aluminum are in general suitable for use as the oxide-forming material.
REFERENCES:
patent: 3632431 (1972-01-01), Andre et al.
patent: 3649382 (1972-03-01), Hawrylo
patent: 3756955 (1973-09-01), Touchy
patent: 4052252 (1977-10-01), Lockwood et al.
Hackh's Chemical Dictionary, 4th Ed., 1969, McGraw-Hill, N.Y. p. 682.
Condensed Chemical Dictionary, 8th Ed., 1971, Van Nostrand, pp. 954, 955.
Handbook on Semiconductors, Keller, v. 3, North-Holland, 1980, pp. 457, 4 494.
Bernstein Hiram
Curry Charles D. B.
Daubenspeck William C.
Sciascia R. S.
The United States of America as represented by the Secretary of
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