Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1995-06-02
1997-08-05
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117 15, 117 20, 117201, C30B 1520
Patent
active
056537999
ABSTRACT:
System and method for determining the diameter of a silicon crystal being pulled from a silicon melt for controlling a silicon crystal growing apparatus. The melt has a surface with a meniscus which is visible as a bright ring adjacent the crystal. A camera generates an image pattern of a portion of the bright ring adjacent the crystal. Image processing circuitry detects a characteristic of the image pattern and defines an edge of the bright ring as a function of the detected characteristic. The image processing circuitry further defines a generally circular shape including the defined edge of the bright ring. The diameter of the crystal is then determined based on the diameter of the defined shape for use in controlling the crystal growing apparatus.
REFERENCES:
patent: 3740563 (1973-06-01), Reichard
patent: 4350557 (1982-09-01), Scholl et al.
patent: 4710258 (1987-12-01), Latka
patent: 4926357 (1990-05-01), Katsuoka et al.
patent: 5138179 (1992-08-01), Baba et al.
patent: 5170061 (1992-12-01), Baba
patent: 5178720 (1993-01-01), Frederick et al.
patent: 5183528 (1993-02-01), Baba et al.
patent: 5240684 (1993-08-01), Baba et al.
patent: 5288363 (1994-02-01), Araki
patent: 5378900 (1995-01-01), Hirano et al.
patent: 5437242 (1995-08-01), Hofstetter et al.
Garrett Felisa
MEMC Electronic Materials , Inc.
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