Method for controlling current during read and program...

Details Method for controlling current during read and program... Method for controlling current during read and program...

2006-08-08

2006-08-08

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Semiconductive

C365S105000, C365S230060

Reexamination Certificate

active

07088613

ABSTRACT:
A method for controlling current fluctuations during read and program operations in a memory structure is provided. The method includes applying a first voltage to a first gate of a word line decoder transistor. The method further includes applying a second voltage to a second gate of a bit line decoder transistor such that the first voltage is greater than the second voltage. The method also includes maintaining the source voltage of the bit line decoder transistor at about zero.

REFERENCES:
patent: 5018108 (1991-05-01), Maruyama
patent: 5572471 (1996-11-01), Proebsting
patent: 5963472 (1999-10-01), Inada et al.
patent: 6034882 (2000-03-01), Johnson et al.
patent: 6434053 (2002-08-01), Fujiwara
C. de Graaf et al., “A Novel High-density Low-Cost Diode Programmable Read Only Memory,”IEDM Tech. Digest(1996), pp. 189-192.
M. Crowley et al., “512Mb PROM with 8 Layers of Antifuse/Diode Cells,” 2003 IEEE International Solid-State Circuits Conference, Session 16, Paper 16.4 (10 pages).

Affiliated with

Also associated with

Rating

Method for controlling current during read and program... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for controlling current during read and program..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for controlling current during read and program... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3705790