Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Making emissive array
Reexamination Certificate
2011-01-25
2011-01-25
Landau, Matthew C (Department: 2813)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Making emissive array
C257S079000, C257S089000, C257S103000, C257SE33045
Reexamination Certificate
active
07875478
ABSTRACT:
A method for controlling the color contrast of a multi-wavelength light-emitting diode (LED) made according to the present invention is disclosed. The present invention includes at least the step of increasing the junction temperature of a multi-quantum-well LED, such that holes are distributed in a deeper quantum-well layer of the LED to increase luminous intensity of the deeper quantum-well layer, thereby controlling the relative intensity ratios of the multiple wavelengths emitted by the LED. The step of increasing junction temperature of the multi-quantum-well LED is achieved either by controlling resistance through modulating thickness of a p-type electrode layer of the LED or by modifying the mesa area size to control its relative heat radiation surface area.
REFERENCES:
patent: 7323721 (2008-01-01), Liao et al.
patent: 2004/0056258 (2004-03-01), Tadatomo et al.
Chhajed et al, “Influence of junction temperature on chromaticity and color-rendering properties of trichromatic white-light sources based on light-emitting diodes,” Journal of Applied Physics 97, 054506 (2005).
Chen Horng-Shyang
Chen Yung-Sheng
Huang Chi-Feng
Huang Jeng-Jie
Huang Jian-Jang
Landau Matthew C
National Taiwan University
Rosenberg , Klein & Lee
Snow Colleen E
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